| PART |
Description |
Maker |
| SCD32-15 |
3.0 AMP Surface Mount Schottky Barrier Rectifiers
VOLTAGE 20V ~ 60V 3.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnol...
|
| SB150 |
Schottky Barrier Rectifiers Reverse Voltage 20V to 60V Forward Current 1.0 Amperes
|
Cystech Electonics Corp.
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| SP206011 |
Voltage 60V 20.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SBL20U60F |
Voltage 60V,20.0 AMP Low VF Planar MOS Barrier Schottky Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| FQT13N06LTF |
60V N-Channel Logic level QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| GBJ1010 GBJ10005 GBJ1001 GBJ1002 GBJ1004 GBJ1006 G |
Aluminum Polymer SMT Capacitor; Capacitance: 6.8uF; Voltage: 25V; Case Size: 6.3x6 mm; Packaging: Tape & Reel 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
10 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
Aluminum Polymer SMT Capacitor; Capacitance: 82uF; Voltage: 20V; Case Size: 10x8 mm; Packaging: Tape & Reel 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| ISL21009BMB841EP ISL21009CMB850EP ISL21009BMB850EP |
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R THREE TERM VOLTAGE REFERENCE, PDSO8
High Voltage Input Precision, Low Noise FGA Voltage References
|
Intersil, Corp.
Intersil Corporation
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| 2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A)
Power Transistor (-60V, -3A)
Power Transistor (-60V -3A)
Power Transistor(-60V, -3A)
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
